1.    Open TINA-9 in the computer and design the schematic as shown in the diagram. You have to rotate and mirror PMOS transistors.
2.     Change each MOSFET type to BSIM-3 model from component property window under “type” tab.
3.    In property window of MOSFET, select Length L=1u and width W=10u for all MOSFET.
4.    Rename the input voltage as VA and VB under property tab. Select type as square wave with DC level 1.5V. Under square wave option, select amplitude 1.5V, frequency 1M (1MHZ) and rise/fall time as default 1n. Do the same for source VB but take different frequency such as 1.5M.

5.     Select supply voltage VS1 value to 3Volt as shown in fig.

6.    Connect one load capacitor of value 10pf to 100pf range at the output node as shown in Fig.

7.    Connect one voltmeter to display output voltage.

8.    For more details on settings/how to change/select MOSFET model etc. see previous expt. manual (CMOS inverter).

9.    When the circuit is completed and ready for simulation then go to Analysis -> transient -> set end display time to 4um (4 micro sec).

10.    Go to View-> separate curve option from display window (graph) to display each wave separately. Now verify the truth table of NAND gate.